Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

By Yi-Qiang Ni   Zhi-Yuan He   Yao Yao   Fan Yang   De-Qiu Zhou   Gui-Lin Zhou   Zhen Shen   Jian Zhong   Yue Zheng   Bai-Jun Zhang   Yang Liu  

Chinese Physics B, Vol. 24, Iss. 5, 2015-05 ,pp. : 57303-57308

IOP Publishing

Access to resources Recommend Favorite

Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

By Yuan-Jie Lü   Zhi-Hong Feng   Zhao-Jun Lin   Hong-Yu Guo   Guo-Dong Gu   Jia-Yun Yin   Yuan-Gang Wang   Peng Xu   Xu-Bo Song   Shu-Jun Cai  

Chinese Physics B, Vol. 23, Iss. 7, 2014-07 ,pp. : 77105-77108

IOP Publishing

Access to resources Recommend Favorite

Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE

By Alekseev A.   Aleksandrov S.   Byrnaz A.   Velikovskii L.   Velikovskii I.   Krasovitskii D.   Pavlenko M.   Petrov S.   Pogorel’skii Yu.   Sokolov I.   Sokolov M.   Stepanov M.   Tkachenko A.   Shkurko A.   Chalyi V.  

Technical Physics Letters, Vol. 31, Iss. 10, 2005-10 ,pp. : 864-867

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

By  

Chinese Physics B, Vol. 24, Iss. 2, 2015-02 ,pp. : 27101-27106

IOP Publishing

Access to resources Recommend Favorite

Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

By Ling Yang   Jing-Jing Ma   Cheng Zhu   Yue Hao   Xiao-Hua Ma  

Chinese Physics Letters, Vol. 27, Iss. 2, 2010-02 ,pp. : 27102-27104

IOP Publishing

Access to resources Recommend Favorite