Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

Author： Fan Min-Min   Xu Jing-Ping   Liu Lu   Bai Yu-Rong   Huang Yong  

Publisher： IOP Publishing

E-ISSN： 1741-4199|24|3|37303-37307

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.3, 2015-03, pp. : 37303-37307

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