Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

By Sheng-Lei Zhao   Yuan Wang   Xiao-Lei Yang   Zhi-Yu Lin   Chong Wang   Jin-Cheng Zhang   Xiao-Hua Ma   Yue Hao  

Chinese Physics B, Vol. 23, Iss. 9, 2014-09 ,pp. : 97305-97309

IOP Publishing

Access to resources Recommend Favorite

The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

By Lei Shi   Shi-Wei Feng   Chun-Sheng Guo   Hui Zhu   Ning Wan  

Chinese Physics B, Vol. 22, Iss. 2, 2013-02 ,pp. : 27201-27204

IOP Publishing

Access to resources Recommend Favorite

Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

By Xiao-Hua Ma   Yuan-Qi Jiang   Xin-Hua Wang   Min Lü   Huo Zhang   Wei-Wei Chen   Xin-Yu Liu  

Chinese Physics B, Vol. 23, Iss. 1, 2014-01 ,pp. : 17303-17306

IOP Publishing

Access to resources Recommend Favorite

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

By  

Chinese Physics B, Vol. 24, Iss. 2, 2015-02 ,pp. : 27101-27106

IOP Publishing

Access to resources Recommend Favorite

Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

By Ling Yang   Jing-Jing Ma   Cheng Zhu   Yue Hao   Xiao-Hua Ma  

Chinese Physics Letters, Vol. 27, Iss. 2, 2010-02 ,pp. : 27102-27104

IOP Publishing

Access to resources Recommend Favorite