Modeling and experiments of N-doped vanadium oxide prepared by a reactive sputtering process

Author： Tao Wang   He Yu   Xiang Dong   Ya-Dong Jiang   Rui-Lin Wu  

Publisher： IOP Publishing

E-ISSN： 1741-4199|24|3|38102-38107

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.3, 2015-03, pp. : 38102-38107

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Correlation of structural, optical and surface morphological properties of N-doped TiO2 thin films prepared by facing targets sputtering technique

By  

Journal of Physics: Conference Series , Vol. 100, Iss. 8, 2008-03 ,pp. : 61-64

IOP Publishing

Access to resources Recommend Favorite

Kinetic properties of TiN thin films prepared by reactive magnetron sputtering

By Solovan M.   Brus V.   Maryanchuk P.   Kovalyuk T.   Rappich J.   Gluba M.  

Physics of the Solid State, Vol. 55, Iss. 11, 2013-11 ,pp. : 2234-2238

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Modeling of Mass Transport and Gas Kinetics of the Reactive Sputtering Process

By  

Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. : C5-45-C5-54

Edp Sciences

Access to resources Recommend Favorite

Optical properties of aluminum-doped zinc oxide films deposited by direct-current pulse magnetron reactive sputtering

By Xiao-Yong Gao   Chao Chen   Sa Zhang  

Chinese Physics B, Vol. 23, Iss. 3, 2014-03 ,pp. : 30701-30705

IOP Publishing

Access to resources Recommend Favorite

Modeling for V—O2 reactive sputtering process using a pulsed power supply

By Tao Wang   He Yu   Xiang Dong   Ya-Dong Jiang   Chao Chen   Ro-Land Wu  

Chinese Physics B, Vol. 23, Iss. 8, 2014-08 ,pp. : 88113-88120

IOP Publishing

Access to resources Recommend Favorite