Energy-band alignment of atomic layer deposited (HfO

Author： Ren-Xu Jia   Lin-Peng Dong   Ying-Xi Niu   Cheng-Zhan Li   Qing-Wen Song   Xiao-Yan Tang   Fei Yang   Yu-Ming Zhang  

Publisher： IOP Publishing

E-ISSN： 1741-4199|24|3|38103-38106

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.3, 2015-03, pp. : 38103-38106

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Atomic-layer-deposited (HfO2)1−x(Al2O3)x nanolaminate films on InP with different Al2O3 contents

By An Chee-Hong   Mahata Chandreswar   Byun Young-Chul   Kim Hyoungsub  

Journal of Physics D: Applied Physics, Vol. 46, Iss. 27, 2013-07 ,pp. : 275301-275306

IOP Publishing

Access to resources Recommend Favorite

Influences of different oxidants on the characteristics of HfAlO x films deposited by atomic layer deposition

By Ji-Bin Fan   Hong-Xia Liu   Fei Ma   Qing-Qing Zhuo   Yue Hao  

Chinese Physics B, Vol. 22, Iss. 2, 2013-02 ,pp. : 27702-27706

IOP Publishing

Access to resources Recommend Favorite

Semiconducting ZnO effect on Maxwell–Wagner relaxation in HfO2/ZnO nanolaminates fabricated by atomic layer deposition

By  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 50, 2014-12 ,pp. : 505302-505306

IOP Publishing

Access to resources Recommend Favorite

氧气通量对反应溅射法制备HfO2薄膜生长过程的影响 Effect of O2 Flux on the Growth Process of HfO2 Thin Films Deposited by Reactive Sputtering

By 杨宇桐   唐武  

Advances in Condensed Matter Physics, Vol. 02, Iss. 01, 2013-02 ,pp. : 12-16

汉斯出版社

Access to resources Recommend Favorite

Comparison of Fluorinated HfO2 and Si3N4 Charge Trapping Layer for Nonvolatile Flash Memories

By Chen Yung-Yu   Lei Gen   Shen Yu-Jie   Lin Shin-Chieh   Chen Yih-Chien  

Ferroelectrics, Vol. 435, Iss. 1, 2012-01 ,pp. : 38-45

Taylor & Francis Ltd

Access to resources Recommend Favorite