Improved Ni ohmic contact on n-type 4H-SiC

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Springer Publishing Company

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Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

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Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 330-334

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Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni

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Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors

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Characterization of tungsten–nickel simultaneous Ohmic contacts to p- and n-type 4H-SiC

By Kragh-Buetow K C   Okojie R S   Lukco D   Mohney S E  

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