Effect of FA/O complexing agents and H₂O₂ on chemical mechanical polishing of ruthenium in weakly alkaline slurry

By Bo Duan   Weijing An   Jianwei Zhou   Shuai Wang  

Journal of Semiconductors, Vol. 36, Iss. 7, 2015-07 ,pp. : 76002-76006

IOP Publishing

Access to resources Recommend Favorite

Effect of novel alkaline copper slurry on 300 mm copper global planarization

By Weijuan Liu   Yuling Liu   Chenwei Wang   Guodong Chen   Mengting Jiang   Haobo Yuan   Pengfei Cheng  

Journal of Semiconductors, Vol. 35, Iss. 9, 2014-09 ,pp. : 96003-96006

IOP Publishing

Access to resources Recommend Favorite

Stability for a novel low-pH alkaline slurry during the copper chemical mechanical planarization

By Guodong Chen   Yuling Liu   Chenwei Wang   Weijuan Liu   Mengting Jiang   Haobo Yuan  

Journal of Semiconductors, Vol. 35, Iss. 8, 2014-08 ,pp. : 86001-86006

IOP Publishing

Access to resources Recommend Favorite

Slurry components of TiO₂ thin film in chemical mechanical polishing

By Bo Duan   Jianwei Zhou   Yuling Liu   Chenwei Wang   Yufeng Zhang  

Journal of Semiconductors, Vol. 35, Iss. 10, 2014-10 ,pp. : 106003-106007

IOP Publishing

Access to resources Recommend Favorite

A new weakly alkaline slurry for copper planarization at a reduced down pressure

By Rui Chen   Jin Kang   Yuling Liu   Chenwei Wang   Ting Cai   Xin Li  

Journal of Semiconductors, Vol. 35, Iss. 2, 2014-02 ,pp. : 26005-26008

IOP Publishing

Access to resources Recommend Favorite