Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni

By Linchao Han   Huajun Shen   Kean Liu   Yiyu Wang   Yidan Tang   Yun Bai   Hengyu Xu   Yudong Wu   Xinyu Liu  

Journal of Semiconductors, Vol. 35, Iss. 7, 2014-07 ,pp. : 72003-72006

IOP Publishing

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A new double-recessed 4H-SiC MESFET with superior RF characteristics

By Aminbeidokhti Amirhossein   Orouji Ali A.  

International Journal of Electronics, Vol. 100, Iss. 2, 2013-02 ,pp. : 171-179

Taylor & Francis Ltd

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A novel 4H–SiC SOI-MESFET with a modified breakdown voltage mechanism for improving the electrical performance

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Semiconductor Science and Technology, Vol. 27, Iss. 1, 2012-01 ,pp. : 15001-15008

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Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors

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Journal of Semiconductors, Vol. 35, Iss. 2, 2014-02 ,pp. : 24002-24005

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Improved Ni ohmic contact on n-type 4H-SiC

By Hallin C.   Yakimova R.   Pécz B.   Georgieva A.   Marinova Ts.   Kasamakova L.   Kakanakov R.   Janzén E.  

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