Growth and characterization of InGaN back barrier HEMTs structure with a compositionally step-graded AlGaN layer

By  

Journal of Semiconductors, Vol. 35, Iss. 11, 2014-11 ,pp. : 113006-113010

IOP Publishing

Access to resources Recommend Favorite

A comparison of the 60Co gamma radiation hardness, breakdown characteristics and the effect of SiN x capping on InAlN and AlGaN HEMTs for space applications

By Smith M D   O’Mahony D   Vitobello F   Muschitiello M   Costantino A   Barnes A R   Parbrook P J  

Semiconductor Science and Technology, Vol. 31, Iss. 2, 2016-02 ,pp. : 25008-25016

IOP Publishing

Access to resources Recommend Favorite

Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors

By Kordoš P.  

Journal of Electronic Materials, Vol. 41, Iss. 11, 2012-11 ,pp. : 3013-3016

Springer Publishing Company

Access to resources Recommend Favorite

Simulation of temperature and electric field-dependent barrier traps effects in AlGaN/GaN HEMTs

By  

Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. : 15010-15017

IOP Publishing

Access to resources Recommend Favorite

Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

By Juncai Ma   Jincheng Zhang   Junshuai Xue   Zhiyu Lin   Ziyang Liu   Xiaoyong Xue   Xiaohua Ma   Yue Hao  

Journal of Semiconductors, Vol. 33, Iss. 1, 2012-01 ,pp. : 14002-14006

IOP Publishing

Access to resources Recommend Favorite