Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy

Publisher: John Wiley & Sons Inc

E-ISSN: 1521-4079|50|1|38-42

ISSN: 0232-1300

Source: CRYSTAL RESEARCH AND TECHNOLOGY (ELECTRONIC), Vol.50, Iss.1, 2015-01, pp. : 38-42

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