Author： Md Arshad M.K. Othman N. Hashim U.
Publisher： Taylor & Francis Ltd
E-ISSN： 1547-6561|40|3|182-196
ISSN： 1040-8436
Source： Critical Reviews in Solid State and Material Sciences, Vol.40, Iss.3, 2015-05, pp. : 182-196
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Gate-to-body tunneling current model for silicon-on-insulator MOSFETs
By Qing-Qing Wu Jing Chen Jie-Xin Luo Kai Lü Tao Yu Zhan Chai Xi Wang
Chinese Physics B, Vol. 22, Iss. 10, 2013-10 ,pp. :
Access to resources
Recommend
By Chao Peng Zhi-Yuan Hu Bing-Xu Ning Hui-Xiang Huang Shuang Fan Zheng-Xuan Zhang Da-Wei Bi Yun-Fei En
Chinese Physics B, Vol. 23, Iss. 9, 2014-09 ,pp. :
By Olejarz Piotr Park Kyoungchul MacNaughton Samuel Dokmeci Mehmet R. Sonkusale Sameer
Journal of Low Power Electronics and Applications, Vol. 2, Iss. 2, 2012-05 ,pp. :
Access to resources