Programming/Erasing Characteristics of Hysteresis-Based Nonvolatile Memory Devices of Single-Wall Carbon Nanotubes

Publisher： Bentham Science Publishers

E-ISSN： 1875-6786|4|3|251-255

ISSN： 1573-4137

Source： Current Nanoscience, Vol.4, Iss.3, 2008-08, pp. : 251-255

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