Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Author: Hui-Min Qian   Guang Yu   Hai Lu   Chen-Fei Wu   Lan-Feng Tang   Dong Zhou   Fang-Fang Ren   Rong Zhang   You-Liao Zheng   Xiao-Ming Huang  

Publisher: IOP Publishing

E-ISSN: 1741-4199|24|7|77307-77311

ISSN: 1674-1056

Source: Chinese Physics B, Vol.24, Iss.7, 2015-07, pp. : 77307-77311

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Abstract