Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors

Author: Jeong Seok Hwan   Liu Na   Park Heekyeong   Hong Young Ki   Kim Sunkook  

Publisher: MDPI

E-ISSN: 2076-3417|8|3|424-424

ISSN: 2076-3417

Source: Applied Sciences, Vol.8, Iss.3, 2018-03, pp. : 424-424

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