A novel physical parameter extraction approach for Schottky diodes

Author： Hao Wang Xing Chen Guang-Hui Xu Ka-Ma Huang

E-ISSN： 1741-4199|24|7|77305-77310

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.7, 2015-07, pp. : 77305-77310

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

DISLOCATION ELECTRONIC STATES FROM SCHOTTKY DIODES IN SILICON

Le Journal de Physique Colloques, Vol. 40, Iss. C6, 1979-06 ,pp. : C6-63-C6-65

Edp Sciences

Access to resources Recommend Favorite

Influence of thin inversion layers on Schottky diodes

Revue de Physique Appliquée (Paris), Vol. 21, Iss. 1, 1986-01 ,pp. : 25-33

Edp Sciences

Access to resources Recommend Favorite

A Novel Approach to Detector Calibration Parameter Determination and Detector Monitoring

Journal of Physics: Conference Series , Vol. 331, Iss. 3, 2011-12 ,pp. : 167-172

IOP Publishing

Access to resources Recommend Favorite

effect of surface modification on the properties of hydrogen-sensitive GaAs-based Schottky diodes

By Tikhov S. Shobolov E. Levichev S. Baidus N.

Technical Physics, Vol. 48, Iss. 5, 2003-05 ,pp. : 592-597

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Mechanisms of current transfer and photosensitivity in Zn/CuInSe₂ Schottky diodes

By Kovalyuk Z. Sydor O. Netyaga V.

Technical Physics Letters, Vol. 32, Iss. 5, 2006-05 ,pp. : 459-462

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite