Publisher: Edp Sciences
E-ISSN: 0035-1687|21|1|25-33
ISSN: 0035-1687
Source: Revue de Physique Appliquée (Paris), Vol.21, Iss.1, 1986-01, pp. : 25-33
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
DISLOCATION ELECTRONIC STATES FROM SCHOTTKY DIODES IN SILICON
Le Journal de Physique Colloques, Vol. 40, Iss. C6, 1979-06 ,pp. :
A novel physical parameter extraction approach for Schottky diodes
By Hao Wang Xing Chen Guang-Hui Xu Ka-Ma Huang
Chinese Physics B, Vol. 24, Iss. 7, 2015-07 ,pp. :