GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy

By Kaun Stephen W   Ahmadi Elaheh   Mazumder Baishakhi   Wu Feng   Kyle Erin C H   Burke Peter G   Mishra Umesh K   Speck James S  

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45011-45025

IOP Publishing

Access to resources Recommend Favorite

N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates

By Ahmadi Elaheh   Wu Feng   Li Haoran   Kaun Stephen W   Tahhan Maher   Hestroffer Karine   Keller Stacia   Speck James S   Mishra Umesh K  

Semiconductor Science and Technology, Vol. 30, Iss. 5, 2015-05 ,pp. : 55012-55019

IOP Publishing

Access to resources Recommend Favorite

An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters

By Di Lecce Valerio  

Journal of Electronic Materials, Vol. 40, Iss. 4, 2011-04 ,pp. : 362-368

Springer Publishing Company

Access to resources Recommend Favorite

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

By Reuters Benjamin  

Journal of Electronic Materials, Vol. 42, Iss. 5, 2013-05 ,pp. : 826-832

Springer Publishing Company

Access to resources Recommend Favorite

Effect of parasitics on electrochemical capacitance-voltage profiling of pseudomorphic high electron mobility transistor structures

By Jogai B.   Stutz C.  

Journal of Electronic Materials, Vol. 26, Iss. 7, 1997-07 ,pp. : 863-867

Springer Publishing Company

Access to resources Recommend Favorite