Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric

Author： Shuyan Zhu   Jingping Xu   Lisheng Wang   Yuan Huang   Shuyan Zhu  

Publisher： IOP Publishing

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.36, Iss.3, 2015-03, pp. : 34006-34010

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