Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|1|15003-15007

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.1, 2015-01, pp. : 15003-15007

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