Effect of In_xGa_1−xN “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

Author： Wei-Ning Qian Shi-Chen Su Hong Chen Zi-Guang Ma Ke-Bao Zhu Miao He Ping-Yuan Lu Geng Wang Tai-Ping Lu Chun-Hua Du Qiao Wang Wen-Bo Wu Wei-Wei Zhang

Publisher： IOP Publishing

E-ISSN： 1741-4199|22|10|106106-106110

ISSN： 1674-1056

Source： Chinese Physics B, Vol.22, Iss.10, 2013-10, pp. : 106106-106110

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