Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers

By Marko I P   Jin S R   Hild K   Batool Z   Bushell Z L   Ludewig P   Stolz W   Volz K   Butkutė R   Pačebutas V   Geizutis A   Krotkus A   Sweeney S J  

Semiconductor Science and Technology, Vol. 30, Iss. 9, 2015-09 ,pp. : 94008-94017

IOP Publishing

Access to resources Recommend Favorite

Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

By Muralidharan R   Ramesh V   Mishra Puspashree   Srinivasan T  

Semiconductor Science and Technology, Vol. 29, Iss. 3, 2014-03 ,pp. : 35002-35008

IOP Publishing

Access to resources Recommend Favorite

Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures

By Mohmad A R   Bastiman F   Hunter C J   Harun F   Reyes D F   Sales D L   Gonzalez D   Richards R D   David J P R   Majlis B Y  

Semiconductor Science and Technology, Vol. 30, Iss. 9, 2015-09 ,pp. : 94018-94023

IOP Publishing

Access to resources Recommend Favorite

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

By Xu Jun   Chen Li   Yu Lisheng   Liang H.   Zhang B.S.   Lau Kei  

Journal of Electronic Materials, Vol. 36, Iss. 9, 2007-09 ,pp. : 1144-1148

Springer Publishing Company

Access to resources Recommend Favorite

Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates

By Tomich D.   Eyink K.   Grazulis L.   Brown G.   Szmulowicz F.   Mahalingam K.   Seaford M.   Kuo C.   Hwang W.   Lin C.  

Journal of Electronic Materials, Vol. 29, Iss. 7, 2000-07 ,pp. : 940-943

Springer Publishing Company

Access to resources Recommend Favorite