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IOP Publishing

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First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data

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Carrier masses and band-gap temperature sensitivity in Ga(AsBi) alloys

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Absorption properties of GaAsBi based p–i–n heterojunction diodes

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Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

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