Effect of in situ annealing on highly-mismatched In 0.75 Ga 0.25 As on InP grown using molecular beam epitaxy

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Springer Publishing Company

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Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers

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Super-flat interfaces in In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

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