Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

Author： Bin Niu   Yuan Wang   Wei Cheng   Zi-Li Xie   Hai-Yan Lu   Long Chang   Jun-Ling Xie  

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|7|77304-77307

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.7, 2015-07, pp. : 77304-77307

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD

By  

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-1155-Pr8-1161

Edp Sciences

Access to resources Recommend Favorite

MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

By  

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-1163-Pr8-1169

Edp Sciences

Access to resources Recommend Favorite

Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor

By Wang W-C.   Pan H-J.   Thei K-B.   Lin K-W.   Yu K-H.   Cheng C-C.   Cheng S-Y.   Liu W-C.  

Superlattices and Microstructures, Vol. 29, Iss. 5, 2001-05 ,pp. : 359-365

Academic Press

Access to resources Recommend Favorite

InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems

By  

Journal of Physics: Conference Series , Vol. 647, Iss. 1, 2015-10 ,pp. : 151-154

IOP Publishing

Access to resources Recommend Favorite

Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51P doubleδ-doped heterojunction bipolar transistor

By Wang W-C.   Chen J-Y.   Pan H-J.   Feng S-C.   Yu K-H.   Liu W-C.  

Superlattices and Microstructures, Vol. 26, Iss. 1, 1999-07 ,pp. : 23-33

Academic Press

Access to resources Recommend Favorite