Double-gate junctionless transistor model including short-channel effects

Author： Paz B C Ávila-Herrera F Cerdeira A Pavanello M A

E-ISSN： 1361-6641|30|5|55011-55021

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.5, 2015-05, pp. : 55011-55021

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