Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

Author： Dubey Sarvesh        

Publisher： IOP Publishing

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.35, Iss.10, 2014-10, pp. : 104002-104008

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