A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance

Author： Sheng-DongHu   Jing-JingJin   Yin-HuiChen   Yu-YuJiang   KunCheng   Jian-LinZhou   Jiang-TaoLiu   RuiHuang   Sheng-JieYao  

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|9|98502-98504

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.9, 2015-09, pp. : 98502-98504

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

By Xiao-Rong Luo   Yin-Chun Luo   Ye Fan   Gang-Yi Hu   Xiao-Wei Wang   Zheng-Yuan Zhang   Yuan-Hang Fan   Jin-Yong Cai   Pei Wang   Kun Zhou  

Chinese Physics B, Vol. 22, Iss. 2, 2013-02 ,pp. : 27304-27308

IOP Publishing

Access to resources Recommend Favorite

Ultralow Specific on-Resistance Trench MOSFET with a U-Shaped Extended Gate

By Zhuo Wang   Peng-Cheng Li   Bo Zhang   Yuan-Hang Fan   Qing Xu   Xiao-Rong Luo  

Chinese Physics Letters, Vol. 32, Iss. 6, 2015-06 ,pp. : 68501-68504

IOP Publishing

Access to resources Recommend Favorite

A low specific on-resistance SOI LDMOS with a novel junction field plate

By Yin-Chun Luo   Xiao-Rong Luo   Gang-Yi Hu   Yuan-Hang Fan   Peng-Cheng Li   Jie Wei   Qiao Tan   Bo Zhang  

Chinese Physics B, Vol. 23, Iss. 7, 2014-07 ,pp. : 77306-77310

IOP Publishing

Access to resources Recommend Favorite

An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer

By Peng-Cheng Li   Luo Xiao-Rong   Yin-Chun Luo   Kun Zhou   Xian-Long Shi   Yan-Hui Zhang   Meng-Shan Lv  

Chinese Physics B, Vol. 24, Iss. 4, 2015-04 ,pp. : 47304-47309

IOP Publishing

Access to resources Recommend Favorite

ON-RESISTANCE IN THE ALDMOST

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-629-C4-632

Edp Sciences

Access to resources Recommend Favorite