A low specific on-resistance SOI LDMOS with a novel junction field plate

Author： Yin-Chun Luo   Xiao-Rong Luo   Gang-Yi Hu   Yuan-Hang Fan   Peng-Cheng Li   Jie Wei   Qiao Tan   Bo Zhang  

Publisher： IOP Publishing

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.7, 2014-07, pp. : 77306-77310

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

By Xiao-Rong Luo   Yin-Chun Luo   Ye Fan   Gang-Yi Hu   Xiao-Wei Wang   Zheng-Yuan Zhang   Yuan-Hang Fan   Jin-Yong Cai   Pei Wang   Kun Zhou  

Chinese Physics B, Vol. 22, Iss. 2, 2013-02 ,pp. : 27304-27308

IOP Publishing

Access to resources Recommend Favorite

A novel LDMOS with a junction field plate and a partial N-buried layer

By  

Chinese Physics B, Vol. 23, Iss. 12, 2014-12 ,pp. : 127303-127307

IOP Publishing

Access to resources Recommend Favorite

An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer

By Peng-Cheng Li   Luo Xiao-Rong   Yin-Chun Luo   Kun Zhou   Xian-Long Shi   Yan-Hui Zhang   Meng-Shan Lv  

Chinese Physics B, Vol. 24, Iss. 4, 2015-04 ,pp. : 47304-47309

IOP Publishing

Access to resources Recommend Favorite

A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance

By Sheng-DongHu   Jing-JingJin   Yin-HuiChen   Yu-YuJiang   KunCheng   Jian-LinZhou   Jiang-TaoLiu   RuiHuang   Sheng-JieYao  

Chinese Physics Letters, Vol. 32, Iss. 9, 2015-09 ,pp. : 98502-98504

IOP Publishing

Access to resources Recommend Favorite

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

By Wei Wu   Bo Zhang   Xiao-Rong Luo   Jian Fang   Zhao-Ji Li  

Chinese Physics B, Vol. 23, Iss. 3, 2014-03 ,pp. : 38503-38507

IOP Publishing

Access to resources Recommend Favorite