Photoluminescence characterization of InGaN/InGaN quantum wells grown by plasma‐assisted molecular beam epitaxy: Impact of nitrogen and galium fluxes

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-3951|252|5|983-988

ISSN： 0370-1972

Source： PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.5, 2015-05, pp. : 983-988

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