Photoluminescence studies of As-P exchange in GaAs/GaInP 2 quantum wells grown by chemical beam epitaxy

Author： Aurand A.   Leymarie J.   Vasson A.   Vasson A.M.   Mesrine M.   Deparis C.   Leroux M.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.336, Iss.1, 1998-12, pp. : 358-361

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Photoluminescence characterization of InGaN/InGaN quantum wells grown by plasma‐assisted molecular beam epitaxy: Impact of nitrogen and galium fluxes

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 5, 2015-05 ,pp. : 983-988

John Wiley & Sons Inc

Access to resources Recommend Favorite

A new method to suppress the In diffusion of InGaNAs/GaAs quantum wells grown by molecular beam epitaxy

By Peng C.S.   Jouhti T.   Pavelescu E.-M.   Konttinen J.   Pessa M.  

Thin Solid Films, Vol. 428, Iss. 1, 2003-03 ,pp. : 176-180

Elsevier

Access to resources Recommend Favorite

Residual carbon and carrier concentration in InGaP layers grown by chemical beam epitaxy

By Bettini J.   de Carvalho M.M.G.   Pudenzi M.A.A.   Laureto E.   Meneses E.A.  

Thin Solid Films, Vol. 429, Iss. 1, 2003-04 ,pp. : 91-95

Elsevier

Access to resources Recommend Favorite

Strong carrier localization in Sb-terminated InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

By Mozume T.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 201-203

Elsevier

Access to resources Recommend Favorite

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

By Lu Shulong  

Nanoscale Research Letters, Vol. 6, Iss. 1, 2011-12 ,pp. : 1-4

Springer Publishing Company

Access to resources Recommend Favorite