Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self‐heating effects by substrate materials

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|212|5|1130-1136

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.5, 2015-05, pp. : 1130-1136

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p‐GaN Gate AlGaN/GaN HEMTs

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 215, Iss. 2, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

An improved DC model for AlGaN/GaN HEMTs

By  

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol. 57, Iss. 5, 2015-05 ,pp. : 1027-1029

John Wiley & Sons Inc

Access to resources Recommend Favorite

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 1170-1173

Trans Tech Publications

Access to resources Recommend Favorite

Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 8, 2015-08 ,pp. : 1742-1745

John Wiley & Sons Inc

Access to resources Recommend Favorite

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1162-1169

John Wiley & Sons Inc

Access to resources Recommend Favorite