The efficiency challenge of nitride light‐emitting diodes for lighting (Phys. Status Solidi A 5∕2015)

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1059-1065

John Wiley & Sons Inc

Access to resources Recommend Favorite

Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN‐HEMTs with CMOS

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1145-1152

John Wiley & Sons Inc

Access to resources Recommend Favorite

Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self‐heating effects by substrate materials

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1130-1136

John Wiley & Sons Inc

Access to resources Recommend Favorite

High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate

By Zhang Jianli   Xiong Chuanbing   Liu Junlin   Quan Zhijue   Wang Li   Jiang Fengyi  

Applied Physics A, Vol. 114, Iss. 4, 2014-03 ,pp. : 1049-1053

Springer Publishing Company

Access to resources Recommend Favorite