Publisher： John Wiley & Sons Inc
E-ISSN： 1862-6319|212|5|1110-1115
ISSN： 1862-6300
Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.5, 2015-05, pp. : 1110-1115
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
High temperature enthalpy and heat capacity of GaN
By Leitner J. Strejc A. Sedmidubsky D. Ruzicka K.
Thermochimica Acta, Vol. 401, Iss. 2, 2003-05 ,pp. :
Active current modeling for GaN HEMT devices
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol. 57, Iss. 3, 2015-03 ,pp. :
A High Power InGaN‐LED on an m‐Plane GaN Substrate
ELECTRONICS & COMMUNICATIONS IN JAPAN, Vol. 98, Iss. 5, 2015-05 ,pp. :