Enhancement‐mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2 plasma implantation

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|212|5|1081-1085

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.5, 2015-05, pp. : 1081-1085

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1162-1169

John Wiley & Sons Inc

Access to resources Recommend Favorite

A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor

By  

Materials Science Forum, Vol. 2018, Iss. 913, 2018-03 ,pp. : 870-875

Trans Tech Publications

Access to resources Recommend Favorite

An improved DC model for AlGaN/GaN HEMTs

By  

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol. 57, Iss. 5, 2015-05 ,pp. : 1027-1029

John Wiley & Sons Inc

Access to resources Recommend Favorite

Performance evaluation of channel length downscaling of various high voltage AlGaN/GaN power HEMTs

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1137-1144

John Wiley & Sons Inc

Access to resources Recommend Favorite

High‐quality GaN film and AlGaN/GaN HEMT grown on 4‐inch Si(110) substrates by MOCVD using an ultra‐thin AlN/GaN superlattice interlayer

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 5, 2015-05 ,pp. : 1075-1078

John Wiley & Sons Inc

Access to resources Recommend Favorite