Self‐aligned normally‐off metal–oxide–semiconductor n++GaN/InAlN/GaN high electron mobility transistors

E-ISSN： 1862-6319|212|5|1086-1090

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.5, 2015-05, pp. : 1086-1090

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