Interstitial to antisite defect conversion during the molecular beam epitaxial deposition on c(4 3 4) GaAs(001) surfaces

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|202|15|2971-2979

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.202, Iss.15, 2005-12, pp. : 2971-2979

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