Epitaxial growth of 3C-SiC by low-pressure chemical vapor deposition on a surface-structure-controlled molecular beam epitaxy layer

Author： Uchida M.   Kitabatake M.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.335, Iss.1, 1998-11, pp. : 32-36

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