Growth and characterization of Ga doped ZnSnAs2 thin films on InP substrates

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PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 12, Iss. 6, 2015-06 ,pp. : 512-515

John Wiley & Sons Inc

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Anti-correlated vertical self-organization of InAs nanowires in stacked structures on InP(001) with InAlAs spacer layer

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Elsevier

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Molecular beam epitaxial growth of high quality InAlAs on InP (100) substrates at very high arsenic pressures

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Excitation dependence of photoluminescence linewidth in InAlAs grown on InP substrates by molecular beam epitaxy

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Time resolved photoluminescence of homo- and hetero-epitaxial layers of InP grown on GaAs substrates

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