Some characteristics of silicon-doped In 0.52 Al 0.48 As grown lattice-matched on InP substrates by molecular beam epitaxy

By Yoon S.F.   Miao Y.B.   Radhakrishnan K.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 284-287

Elsevier

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Molecular beam epitaxial growth of high quality InAlAs on InP (100) substrates at very high arsenic pressures

By Yoon S.F.   Miao Y.B.   Radhakrishnan K.  

Thin Solid Films, Vol. 279, Iss. 1, 1996-06 ,pp. : 11-13

Elsevier

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A photoluminescence and X-ray diffraction analysis of InAlAs/InP heterostructures grown by molecular beam epitaxy

By Yoon S.F.   Miao Y.B.   Radhakrishnan K.   Swaminathan S.  

Thin Solid Films, Vol. 266, Iss. 2, 1995-10 ,pp. : 302-306

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Electrical and optical properties of InP grown by molecular beam epitaxy using a valved phosphorus cracker cell

By Yoon S.F.   Zheng H.Q.   Zhang P.H.   Mah K.W.   Ng G.I.  

Thin Solid Films, Vol. 326, Iss. 1, 1998-08 ,pp. : 233-237

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Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates

By Fujikura H.   Kihara M.   Hasegawa H.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 22-25

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