Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy

Publisher： John Wiley & Sons Inc

E-ISSN： 1610-1642|12|4‐5|341-344

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.12, Iss.4‐5, 2015-04, pp. : 341-344

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