The growth mechanism of GaN grown by hydride vapor phase epitaxy in N 2 and H 2 carrier gas

Author： Liu H.-P.   Tsay J.-D.   Liu W.-Y.   Guo Y.-D.   Hsu J.T.   Chen I.-G.  

Publisher： Elsevier

ISSN： 0022-0248

Source： Journal of Crystal Growth, Vol.260, Iss.1, 2004-01, pp. : 79-84

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