A numerical analysis of a MOCVD process for the growth of GaN nanowires using GaCl3 and NH3

E-ISSN： 1610-1642|12|4‐5|389-393

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.12, Iss.4‐5, 2015-04, pp. : 389-393

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