Two‐dimensional numerical analysis of nanoscale junctionless and conventional Double Gate MOSFETs including the effect of interfacial traps

Publisher： John Wiley & Sons Inc

E-ISSN： 1610-1642|9|10‐11|2041-2044

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.9, Iss.10‐11, 2012-10, pp. : 2041-2044

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