Preferential Formation of SiOC over SiC Linkage upon Thermal Grafting on Hydrogen‐Terminated Silicon (111)

E-ISSN： 1521-3765|20|46|15151-15158

ISSN： 0947-6539

Source： CHEMISTRY - A EUROPEAN JOURNAL, Vol.20, Iss.46, 2014-11, pp. : 15151-15158

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