Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0–1.2 μm

Author： Morozov S. Kryzhkov D. Aleshkin V. Zvonkov B. Vikhrova O.

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7826

Source： Semiconductors, Vol.47, Iss.11, 2013-11, pp. : 1504-1507

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