Microstructure of bulk GaN layer grown on sapphire substrates with amorphous buffer

Author： Bel’kov V. Zhilyaev Yu. Mosina G. Raevskii S. Sorokin L. Shcheglov M.

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.42, Iss.9, 2000-09, pp. : 1606-1609

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

The effects of growth temperature of AlN buffer layers on a-plane GaN grown on r-plane sapphire by MOCVD

Journal of Physics: Conference Series , Vol. 276, Iss. 1, 2011-02 ,pp. : 1180-1187

IOP Publishing

Access to resources Recommend Favorite

Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates

By Ren-YuanJiang Sheng-RuiXu Jin-ChengZhang TengJiang Hai-QingJiang Zhi-ZheWang Yong-XiangFan YueHao

Chinese Physics Letters, Vol. 32, Iss. 9, 2015-09 ,pp. : 98102-98105

IOP Publishing

Access to resources Recommend Favorite

GaN Films Grown on Si (111) Substrates Using a Composite Buffer with Low Temperature AlN Interlayer

By Yu-Tao Fang Yang Jiang Zhen Deng Peng Zuo Hong Chen

Chinese Physics Letters, Vol. 31, Iss. 2, 2014-02 ,pp. : 28101-28104

IOP Publishing

Access to resources Recommend Favorite

Properties of GaN layers deposited on AlN/sapphire template substrates

Journal of Physics: Conference Series , Vol. 146, Iss. 1, 2009-01 ,pp. : 61-66

IOP Publishing

Access to resources Recommend Favorite

GaN films grown by vapor-phase epitaxy in a hydride-chloride system on Si(111) substrates with AlN buffer sublayers

By Bessolov V. Davydov V. Zhilyaev Yu. Konenkova E. Mosina G. Raevskii S. Rodin S. Sharofidinov Sh. Shcheglov M. Park Hee Koike Masayoshi

Technical Physics Letters, Vol. 31, Iss. 11, 2005-11 ,pp. : 915-918

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite