GaN films grown by vapor-phase epitaxy in a hydride-chloride system on Si(111) substrates with AlN buffer sublayers

Author: Bessolov V.   Davydov V.   Zhilyaev Yu.   Konenkova E.   Mosina G.   Raevskii S.   Rodin S.   Sharofidinov Sh.   Shcheglov M.   Park Hee   Koike Masayoshi  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7850

Source: Technical Physics Letters, Vol.31, Iss.11, 2005-11, pp. : 915-918

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content