Effect of current on the electroluminescence of defects produced by high-temperature post-implantation annealing of Si: (Er,O) structures in a chlorine-containing environment

Author： Emel’yanov A.   Shek E.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.46, Iss.10, 2004-10, pp. : 1810-1814

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