Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures

Author： Burbaev T.   Kurbatov V.   Rzaev M.   Pogosov A.   Sibel’din N.   Tsvetkov V.   Lichtenberger H.   Schäffler F.   Leitao J.   Sobolev N.   Carmo M.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.47, Iss.1, 2005-01, pp. : 71-75

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