DEEP STATES AND SURFACE PROCESSES IN GaAs GROWN BY MOLECULAR BEAM EPITAXY

Publisher： Edp Sciences

E-ISSN： 0449-1947|43|C5|C5-351-C5-355

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.43, Iss.C5, 1982-12, pp. : C5-351-C5-355

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